Growing demands on the detectors for high energy physics experiments at the International Linear Collider require novel solutions of semiconductor detectors characterised by improved parameters in terms of granularity, readout speed, radiation hardness and sensor thickness. Nowadays a common trend in the field of highly segmented ionising radiation detectors is the development of monolithic active pixel detectors, which allow integration of a pixel detector and readout electronics in one entity. It is expected that the monolithic approach will enable reducing material budget in future experiments and will allow lowering sensor costs due to the elimination of complicated bump-bonding flip-chip processing.

At Fermilab we continue to pursue the hybrid pixel detector technology and also investigate monolithic active pixel detectors. With regard to research on the active pixel technology, tests are being carried out on 130nm test devices and the Silicon-on-Insulator (SOI) technology is being pursued. An integrated approach is taken by simultaneously studying the sensor technology and the mechanical design of vertex detectors as well as tracking detectors.